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| Aluminum nitride (AlN) is a covalent compound, an atomic crystal, belonging to diamond-like nitrides, with a hexagonal crystal system and a wurtzite-type crystal structure. It is non-toxic, appears white or gray-white, and has a theoretical density of 3.26 g/cm³. | |
| Aluminum nitride material has the following characteristics: | |
| (1) High thermal conductivity (theoretical value approximately 320 W/m·K); (2) High insulation performance; (3) Low thermal expansion coefficient (4.5×10⁻⁶/°C) matches that of Si (3.5~4×10⁻⁶/°C) and GaAs (6×10⁻⁶/°C); (4) Excellent electrical performance (dielectric constant, dielectric loss, volume resistivity, dielectric strength); (5) Good mechanical properties; (6) Good corrosion resistance; (7) Good optical transmission characteristics; | |
| Aluminum nitride ceramics have become the ideal heat dissipation and packaging materials for a new generation of large-scale integrated circuits, semiconductor modules, and high-power devices. They are widely used in fields such as HBLED and UVLED packaging, high-power integrated circuits, power modules, RF/microwave communications, automotive electronics, microelectronics semiconductors, and image transmission. | |
