Silicon carbide, as a third-generation semiconductor material, can be used to create a new generation of high-efficiency, energy-saving power electronic devices. It is widely applied across various sectors of the national economy, such as air conditioning, photovoltaic power generation, wind power generation, high-efficiency electric motors, hybrid and pure electric vehicles, and high-speed trains.

Silicon carbide crystal growth furnace is an indispensable key equipment for producing silicon carbide crystals. This equipment uses induction heating to sublimate silicon carbide powder in a graphite crucible under a process gas environment, depositing it onto a silicon carbide seed crystal, i.e., utilizing the physical vapor transport method (PVT ) growth6inch silicon carbide crystal。