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JD-1200The fully automatic flexible-shaft single-crystal furnace is a flexible-shaft pulling-type single-crystal furnace. It operates in an inert gas environment, using a graphite resistance heater to melt silicon material of a certain purity, and employs the Czochralski method to grow dislocation-free single crystals. This equipment can produce high-quality single crystals required for solar photovoltaic cells and large-scale integrated circuits. The equipment **can be used28Inch thermal system, **melt material370kgDrawing10Single crystal of inches or below. Due to the increase in input material, the production capacity is higher thanJD-1100Improvement of furnace type20%Above isJD-1100The sister model of the single-crystal furnace, in addition to havingJD-1100In addition to the characteristics of the single-crystal furnace, significant improvements have been made in terms of appearance design, ease of maintenance and repair, degree of automation, and various performance indicators.
1 | Model/Model number | JD-1200 |
2 | Name | Single crystal silicon furnace |
3 | Power supply voltage | 380V |
4 | Power frequency | 50Hz |
5 | Heating method, heating component | Resistance heating, graphite heater |
6 | Main heater **power | 165KW |
7 | Main heater **heating voltage**/Electric current | 55V/3000A |
8 | Auxiliary heater **power** | 60KW |
9 | Auxiliary Heater **Heating Voltage**/Electric current | 50V/1200A |
10 | Total machine power | ≤240KW |
11 | Temperature inside the furnace | 1600℃ |
12 | Ultimate vacuum degree in the cold furnace | ﹤3Pa |
13 | The diameter range of the grown crystal. | ≦10″ |
14 | Melt weight | Max 370kg |
15 | Raw material | Polycrystalline silicon raw material |
16 | Main chamber dimensions | Ф1200×1400mm |
17 | The diameter of the rotary valve | ¢360 |
18 | Deputy Room+Size of the operation room | ¢360×4600mm |
19 | The pulling speed range of the seed crystal | 0.1～10mm/min |
20 | Seed crystal fast | ≥500mm/min |
21 | The rotation speed range of the seed crystal. | 2-30rmp |
22 | The crucible lifting speed range | 0.02～1mm/min |
23 | Crucible rotation speed range | 1-30rpm |
24 | The effective travel distance of the seed crystal in the auxiliary chamber. | ≥4000mm |
25 | Total height of the main unit | 10242mm |
26 | The floor area of the main unit | 2518mm×1700mm |
27 | The total floor area of the machine | 5500mm×6500mm |
28 | Requirements for Incoming Water (Pressure) | **0.40Mpa Pressure difference0.2Mpa |
29 | Cooling water consumption/Taiwan | >25 m3/h |
30 | Cooling water inlet temperature | 25-28℃ |
31 | Argon consumption/Taiwan | 0.3Mpa~0.7Mpa≈110L/min |
