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High-efficiency monocrystalline ingots are single crystals with a <100> crystal orientation prepared using the Czochralski method, primarily used for manufacturing solar cells with low degradation and high conversion efficiency. These high-efficiency monocrystalline ingots are produced through processes such as charging, furnace assembly, melting, temperature adjustment, temperature stabilization, seeding, shouldering, necking, body growth, tailing, and furnace shutdown, resulting in high-purity, long-lifetime, low-cost single-crystal ingots with a near-perfect crystal structure. The parameters are as follows:
Serial number | Project | Specifications | Detection method |
Material Propeties Material Properties | |||
1 | Growth Method | Czochralski (CZ) | - |
2 | Dopant | Boron doped | - |
3 | Type | P-Type | Napson EC-80TPN |
4 | Oxygen content | ≤8.0×1017 atoms/cm3 | FTIR(ASTM F121-83) |
5 | Carbon content | ≤5.0×1016 atoms/cm3 | FTIR(ASTM F123-91) |
6 | Surface orientation | ﹤100﹥±3º | X-ray Diffraction Method |
8 | Dislocation Density | ≤500 pcs/cm² | Preferential Etch Techniques(ASTM F47-88) |
Electrical Propeties Electrical Characteristics | |||
1 | Resistivity | ■ 0.5-1.5 Ω·cm □ 1.0-3.0 Ω·cm | 4-probe resistivity measurement |
2 | Silicon rod minority lifetime | ≥50us | Sinton BCT-400（SEMI PV13） |
